Silicon Scanning Mirrors:SI-SM-1064-30-Y
Number:SI-SM-1064-30-Y
Silicon mirrors have the advantages of light weight, small size, good thermal stability, and high mechanical strength. Applied to lasers, telescopes, microscopes, scanners, etc. Galvanometer scanning is the process of first incident the laser beam generated by the laser emission device onto the X-axis galvanometer, then reflecting it onto the Y-axis galvanometer. After secondary reflection by the Y-axis galvanometer, it can be projected onto the working plane, forming a scanning point. Then, the beam deflector composed of X and Y scanning heads is driven by a galvanometer motor to deflect the laser beam within the predetermined scanning range, so that the laser focal point with a certain power density leaves a permanent mark on the marking material, completing the scanning of the image. Each beam deflector has a specially designed reflective lens, and the different deflection methods of the two lenses can enable the laser to scan different shapes and print different models. Can be coated with reflective film, anti reflective film, filter film, spectroscopic film, polarizing film, and metallization film systems.
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Incident Beam Dia | Dim(mm) | X/Y Type | Wavelength | Coating | Compare | |
---|---|---|---|---|---|---|
Screen | Screen | Screen | Screen | Screen | ||
More+ Less | 30 | 64*43*3.5 | Y | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-30-Y Number:SI-SM-1064-30-Y
Incident Beam Dia:30
Dim(mm):64*43*3.5
X/Y Type:Y
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
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More+ Less | 30 | 54*35*3.5 | X | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-30-X Number:SI-SM-1064-30-X
Incident Beam Dia:30
Dim(mm):54*35*3.5
X/Y Type:X
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 20 | 47*31*3 | Y | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-20-Y Number:SI-SM-1064-20-Y
Incident Beam Dia:20
Dim(mm):47*31*3
X/Y Type:Y
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 20 | 37*25.5*3 | X | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-20-X Number:SI-SM-1064-20-X
Incident Beam Dia:20
Dim(mm):37*25.5*3
X/Y Type:X
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 18 | 40*26*2.5 | Y | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-18-Y Number:SI-SM-1064-18-Y
Incident Beam Dia:18
Dim(mm):40*26*2.5
X/Y Type:Y
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 18 | 27*23*2.5 | X | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-18-X Number:SI-SM-1064-18-X
Incident Beam Dia:18
Dim(mm):27*23*2.5
X/Y Type:X
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 16 | 37.5*22.5*2.5 | Y | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-16-Y Number:SI-SM-1064-16-Y
Incident Beam Dia:16
Dim(mm):37.5*22.5*2.5
X/Y Type:Y
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 16 | 27*20*2.5 | X | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-16-X Number:SI-SM-1064-16-X
Incident Beam Dia:16
Dim(mm):27*20*2.5
X/Y Type:X
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 15 | 33.5*22*2.5 | Y | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-15-Y Number:SI-SM-1064-15-Y
Incident Beam Dia:15
Dim(mm):33.5*22*2.5
X/Y Type:Y
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
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More+ Less | 15 | 28*17*2.5 | X | 1064nm | Dielectric | |
Silicon Scanning Mirrors:SI-SM-1064-15-X Number:SI-SM-1064-15-X
Incident Beam Dia:15
Dim(mm):28*17*2.5
X/Y Type:X
Wavelength:1064nm
Substrate Material:Silicon(Si)
Length Tolerance(mm):+0.0/-0.1
Width Tolerance(mm):+0.0/-0.1
Thk Tolerance(mm):+0.0/-0.05
Surface Quality:60-40
Surface Accuracy:λ/2
Coating:Dielectric
Clear Aperture:90%
|
Material Data | |
Optical Propertie | |
Transmission Range | 1.2-15μm |
Refractive Index | 3.41776%@10μm |
Reflection Loss | 46.1%@10μm |
Structure | Single crystal,synthetic |
Cleavage Planes | <111> |
Physical Properties | |
Density [g/cm3] | 2.33 |
Melting Point [℃] | 1414 |
Thermal Conductivity [W/(m×K)] | 163 @ 313K |
Thermal Expansion [10-6/K] | 2.6 @ 293K |
Knoop Hardness [kg/mm2] | 1100 |
Specific Heat Capacity [J/(kg×K)] | 712.8 |
Dielectric Constant | 13 @f= 9.37GHz |
Young's Modulus (E) [GPa] | 130.91 |
Shear Modulus(G) [GPa] | 79.92 |
Bulk Modulus(K) [GPa] | 101.97 |
Poisson Coefficient | 0.266 |
Chemical Properties | |
Solubility / g/L | None |
Molecular Weight / g/mol | 28.09 |
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