Czochralski Silicon

Czochralski silicon crystal is a type of silicon single crystal prepared by the Czochralski method. Czochralski silicon is mainly used for manufacturing integrated circuits and semiconductor devices, with advantages such as high purity, high density, and large-scale. The manufacturing process requires a series of process cuts to obtain silicon wafers suitable for different applications. Used for semiconductor integrated circuits, diodes, epitaxial substrates, and solar cells. At present, the crystal diameter can be controlled within 3 to 8 inches. It can process shapes such as circular, rectangular, perforated, crescent, wedge-shaped, flat convex, flat concave, double convex, double concave, open ball, and prismatic.

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	Dia(mm)	ThK(mm)	Structure	Orientation
	Screen Reset 3-300	Screen Reset 0.5-60	Screen Reset Monocrystalline	Screen Reset <100> <110> <111>
More+ Less	3-300	0.5-60	Monocrystalline	<100>
CZ-Silicon，3-300mm，Monocrystalline<100> Number：SiD003 Dia(mm)：3-300 ThK(mm)：0.5-60 Structure：Monocrystalline Orientation：<100> Shape：Customizable Diameter Tolerance(mm)：+0.0/-0.1 Thk Tolerance(mm)：±0.1 Material：Silicon（Si） Transmission Range：1-10μm Density(g/cm³)：2.33 REACH：Compliant ROHS：Compliant
More+ Less	3-300	0.5-60	Monocrystalline	<110>
CZ-Silicon，3-300mm，Monocrystalline<110> Number：SiD002 Dia(mm)：3-300 ThK(mm)：0.5-60 Structure：Monocrystalline Orientation：<110> Shape：Customizable Diameter Tolerance(mm)：+0.0/-0.1 Thk Tolerance(mm)：±0.1 Material：Silicon（Si） Transmission Range：1-10μm Density(g/cm³)：2.33 REACH：Compliant ROHS：Compliant
More+ Less	3-300	0.5-60	Monocrystalline	<111>
CZ-Silicon，3-300mm，Monocrystalline<111> Number：SiD001 Dia(mm)：3-300 ThK(mm)：0.5-60 Structure：Monocrystalline Orientation：<111> Shape：Customizable Diameter Tolerance(mm)：+0.0/-0.1 Thk Tolerance(mm)：±0.1 Material：Silicon（Si） Transmission Range：1-10μm Density(g/cm³)：2.33 REACH：Compliant ROHS：Compliant

Material Data
Optical Properties
Transmission Range	1.2-15μm
Refractive Index	3.41776%@10μm
Reflection Loss	46.1%@10μm
Structure	Single crystal,synthetic
Cleavage Planes	<111>
Physical Properties
Density [g/cm3]	2.33
Melting Point [℃]	1414
Thermal Conductivity [W/(m×K)]	163 @ 313K
Thermal Expansion [10-6/K]	2.6 @ 293K
Knoop Hardness [kg/mm2]	1100
Specific Heat Capacity [J/(kg×K)]	712.8
Dielectric Constant	13 @f= 9.37GHz
Young's Modulus (E) [GPa]	130.91
Shear Modulus(G) [GPa]	79.92
Bulk Modulus(K) [GPa]	101.97
Poisson Coefficient	0.266
Chemical Properties
Solubility / g/L	None
Molecular Weight / g/mol	28.09

Czochralski Silicon

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